High-mobility TFT and enhanced luminescence utilizing nucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic integration

Abstract

Record-high mobility Ge-based TFT (μfe: 423 cm2/Vs) and significant enhancement of near-infrared (NIR) luminescence (×54 Ge bulk) were demonstrated with single-crystalline GeSn layer on transparent substrate grown by a novel liquid-phase crystallization technique. Our GeSn growth scheme is fully compatible with the conventional CMOS process and can provide high-quality tensile-strained p- and n-type GeSn layers, thus paving the way for monolithic optoelectronic integration available not only for optical communications but also for NIR imaging and biochemical sensing with wide wavelength range.