Development of Near UV Laser Diodes

R. Kirste, S. Mita, P. Reddy, A. Franke, Q. Guo, Ke Wang, R. Collazo, Z. Sitar
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Abstract

The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.
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近紫外激光二极管的发展
介绍了基于单晶GaN衬底的AlGaN材料体系的近紫外激光二极管的研究进展。这包括松弛富ga的AlGaN层的生长,紫外激光二极管的设计,以及电学和光学性质的讨论。我们表明,通过光泵浦激光器的演示,一条通向电注入激光二极管的途径是可行的。
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