M. Fiederle, A. Fauler, V. Babentsov, J. Franc, J. Ludwig, K. Benz
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引用次数: 14
Abstract
CdTe crystals had been grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. To obtain stable growth conditions the growth rate and temperature gradient had been adjusted by in-situ temperature monitoring. Several modifications had been applied to improve crystallinity. The effort of the improvements could be demonstrated by reduction of twins and the growth of large single crystalline grains up to 40/spl times/40 mm/sup 2/. Different dopants had been applied to obtain resistivities of 5/spl times/10/sup 8/ Ohmcm up to 2/spl times/10/sup 10/ Ohmcm.
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