Sun Zhen, K. Tong, H. Cho, Y. Wong, L. Tsang, P. W. Chan
{"title":"Ar laser annealing of sputtered Si films for TFT applications","authors":"Sun Zhen, K. Tong, H. Cho, Y. Wong, L. Tsang, P. W. Chan","doi":"10.1109/TENCON.1995.496335","DOIUrl":null,"url":null,"abstract":"We have shown that r.f. sputtered Si films crystallized by cw Ar/sup +/ laser irradiation is a suitable material for fabrication of polysilicon TFTs. Polycrystalline Si film with proper annealing condition has a high Hall mobility up to 120 cm/sup 2//V-s in p-type samples. The dependence of dark conductivity on temperature suggests that much reduced trap density in laser-annealed Si films is the reason for the high mobility, despite the fact that the grain size is only 30 nm.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496335","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have shown that r.f. sputtered Si films crystallized by cw Ar/sup +/ laser irradiation is a suitable material for fabrication of polysilicon TFTs. Polycrystalline Si film with proper annealing condition has a high Hall mobility up to 120 cm/sup 2//V-s in p-type samples. The dependence of dark conductivity on temperature suggests that much reduced trap density in laser-annealed Si films is the reason for the high mobility, despite the fact that the grain size is only 30 nm.
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