A. Bannon, Christopher P. Hurrell, Derek Hummerston, C. Lyden
{"title":"An 18 b 5 MS/s SAR ADC with 100.2 dB dynamic range","authors":"A. Bannon, Christopher P. Hurrell, Derek Hummerston, C. Lyden","doi":"10.1109/VLSIC.2014.6858371","DOIUrl":null,"url":null,"abstract":"This paper presents an 18 bit 5 MS/s SAR ADC. It has a dynamic range of 100.2 dB, SNR of 99 dB, INL of ±2 ppm and DNL of ±0.4 ppm. It has currently the lowest noise floor of any monolithic Nyquist converter relative to the full scale input (21.9 nV/√Hz, ±5V full scale) known to the author, all of this is achieved with an ADC core power of 30.52 mW giving a Schreier figure of merit of 179.3 dB [1]. Architectural choices such as the use of a residue amplifier are outlined that enable the high sample rate, low noise and power efficiency. The design is implemented on 0.18 μm CMOS with MIM capacitors and both 1.8 V and 5 V MOS devices. An LVDS interface is used to transfer the ADC result off chip.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on VLSI Circuits Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2014.6858371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42
Abstract
This paper presents an 18 bit 5 MS/s SAR ADC. It has a dynamic range of 100.2 dB, SNR of 99 dB, INL of ±2 ppm and DNL of ±0.4 ppm. It has currently the lowest noise floor of any monolithic Nyquist converter relative to the full scale input (21.9 nV/√Hz, ±5V full scale) known to the author, all of this is achieved with an ADC core power of 30.52 mW giving a Schreier figure of merit of 179.3 dB [1]. Architectural choices such as the use of a residue amplifier are outlined that enable the high sample rate, low noise and power efficiency. The design is implemented on 0.18 μm CMOS with MIM capacitors and both 1.8 V and 5 V MOS devices. An LVDS interface is used to transfer the ADC result off chip.