Transmission Electron Microscopy (TEM) Techniques for Semiconductor Failure Analysis

Sam Subramanian, K. Ly, Tony Chrastecky
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Abstract

This presentation shows how transmission electron microscopy (TEM) is used in semiconductor failure analysis to locate and identify defects based on their physical and elemental characteristics. It covers sample preparation methods for planar, cross-sectional, and elemental analysis, reviews the capabilities of different illumination and imaging modes, and shows how beam-specimen interactions are employed in energy dispersive (EDS) and electron energy loss spectroscopy (EELS). It describes the various ways transmission electron microscopes can be configured for elemental analysis and mapping and reviews the advantages of scanning TEM (STEM) approaches. It also provides an introduction to energy-filtered TEM (EFTEM) and how it compares with other TEM imaging techniques.
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半导体失效分析的透射电子显微镜技术
本报告展示了如何在半导体失效分析中使用透射电子显微镜(TEM)来定位和识别基于其物理和元素特征的缺陷。它涵盖了平面、横截面和元素分析的样品制备方法,回顾了不同照明和成像模式的能力,并展示了如何在能量色散(EDS)和电子能量损失光谱(EELS)中使用光束-样品相互作用。它描述了可以配置透射电子显微镜进行元素分析和绘图的各种方法,并回顾了扫描透射电子显微镜(STEM)方法的优点。本文还介绍了能量滤波透射电镜(EFTEM)及其与其他透射电镜成像技术的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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