Vertical Channel GaN Field Effect Transistor Without Junction for High Power Application

Abstract

In this paper, we proposed a vertical channel GaN FET without junctions particularly suitable for power application. It offers less fabrication complexity and cost with enhanced device characteristics as compared to the referenced device. GaN vertical channel junction field effect transistor (VC-JFET) of equal dimension and doping concentrations is considered as the reference device. A comprehensive simulation study of parameter variation on proposed device characteristics has been performed and studied. The study envisaged the impact of lateral and vertical dimensions and doping on various device characteristics like current, ON resistance ($R_{ON}$), breakdown voltage, trans-conductance (gm), capacitance, and unity gain frequency $(f_{T})$.The obtained results and their effect on device characteristics have been thoroughly analyzed.