{"title":"Experimental Verification of Microwave Phase Shifters Using Barium Strontium Titanate (BST) Varactors","authors":"K. Annam, D. Spatz, E. Shin, G. Subramanyam","doi":"10.1109/NAECON46414.2019.9058107","DOIUrl":null,"url":null,"abstract":"In this paper, parallel plate varactor based phase shifter circuits using Barium Strontium Titanate (BST) thin films are presented. A cascade of 10, 15 and 20 parallel plate varactors were able to produce (150°, 258°, 297°), (218°, 381°,443°) and (227°, 402°, 464°) phase shift at (5, 10, 12 GHz) respectively. The 360° phase shift is achieved with small device size, low bias voltages (0-8 V), low leakage currents, low insertion loss and high figure of merit (FOM). FOM of 40, 33, 24 Degrees/dB is achieved with 10, 15 and 20 shunt varactors at 12 GHz respectively. The proposed circuit is very easy to fabricate which uses a CPW transmission line configuration and can be easily integrated with other circuits on chip.","PeriodicalId":193529,"journal":{"name":"2019 IEEE National Aerospace and Electronics Conference (NAECON)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE National Aerospace and Electronics Conference (NAECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON46414.2019.9058107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, parallel plate varactor based phase shifter circuits using Barium Strontium Titanate (BST) thin films are presented. A cascade of 10, 15 and 20 parallel plate varactors were able to produce (150°, 258°, 297°), (218°, 381°,443°) and (227°, 402°, 464°) phase shift at (5, 10, 12 GHz) respectively. The 360° phase shift is achieved with small device size, low bias voltages (0-8 V), low leakage currents, low insertion loss and high figure of merit (FOM). FOM of 40, 33, 24 Degrees/dB is achieved with 10, 15 and 20 shunt varactors at 12 GHz respectively. The proposed circuit is very easy to fabricate which uses a CPW transmission line configuration and can be easily integrated with other circuits on chip.