An ultra-low-power self-biased current reference

Edgar Mauricio Camacho-Galeano, C. Galup-Montoro, M. C. Schneider
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引用次数: 5

Abstract

This paper presents the design of an ultra-low-power self-biased 400 pA current source. An efficient design methodology has resulted in a cell area around 0.045 mm/sup 2/ (0.027 mm/sup 2/) in the AMIS 1.5 /spl mu/m (TSMC 0.35 /spl mu/m) CMOS technology and power consumption around 2 nW for 1.2 V supply. Simulated and experimental results validate the design and show that the current sources can operate at supply voltages down to 1.1 V with a good regulation (<4%/V variation of the supply voltage in a 0.35 /spl mu/m technology). This current source is suitable for very-low-power applications.
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超低功耗自偏置电流基准
本文介绍了一种超低功耗自偏置400pa电流源的设计。有效的设计方法使得AMIS 1.5 /spl mu/m(台积电0.35 /spl mu/m) CMOS技术的单元面积约为0.045 mm/sup 2/ (0.027 mm/sup 2/),功耗约为2 nW, 1.2 V电源。仿真和实验结果验证了该设计,并表明电流源可以在低至1.1 V的电源电压下工作,并且具有良好的稳节性(在0.35 /spl mu/m的技术中,电源电压变化<4%/V)。这种电流源适用于非常低功耗的应用。
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