B. Venkatesh, M. Ahrens, Wei Liu, H. Partovi, D. Rinerson, Jih Lien, Tong Wang, S. Govindachar, D. Rogers
{"title":"A CMOS 1Mb EPROM","authors":"B. Venkatesh, M. Ahrens, Wei Liu, H. Partovi, D. Rinerson, Jih Lien, Tong Wang, S. Govindachar, D. Rogers","doi":"10.1109/ISSCC.1986.1156906","DOIUrl":null,"url":null,"abstract":"A 1Mb CMOS EPROM with 150ns access time power dissipation of 250mW and cell size of 20.25μm<sup>2</sup>will be described. The die measures 79K mil<sup>2</sup>.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1986.1156906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A 1Mb CMOS EPROM with 150ns access time power dissipation of 250mW and cell size of 20.25μm2will be described. The die measures 79K mil2.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
