RF de-embedding technique for extracting power MOSFET package parasitics

Abstract

The performance of RF power MOSFETs in amplifier applications is often critically determined by the values of package and device parasitic reactive elements. These elements are frequently characterized using special "open-package" or "golden" reference units. Repetitive or multiple measurements may also be required. In this paper, methods for de-embedding package inductances and extracting device capacitances are presented. Using the presented methodology, the gate, drain, and source inductances, as well as the input capacitance, are obtained from two simple S-parameter measurements. Similar simple AC measurements are used to obtain the output and reverse-transfer capacitances. Inductance is measured under zero-current conditions, but capacitances are extracted with and without current flowing. The methodology can be performed on any packaged device and does not require a precisely characterized reference unit. Results are presented and demonstrated by comparison with reported data sheet values and with finite-element numerical simulation results.