{"title":"Accurate estimation of electron velocity overshoot in sub-quarter micron silicon structures and MOSFET devices","authors":"M. El-Saba","doi":"10.1109/NRSC.1998.711503","DOIUrl":null,"url":null,"abstract":"In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is primarily related to inaccurate modeling of electron drift mobility as a function of electron temperature. We show that expressing the electron drift mobility as a function of electron energy reduces such unphysical results.","PeriodicalId":128355,"journal":{"name":"Proceedings of the Fifteenth National Radio Science Conference. NRSC '98 (Cat. No.98EX109)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fifteenth National Radio Science Conference. NRSC '98 (Cat. No.98EX109)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NRSC.1998.711503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is primarily related to inaccurate modeling of electron drift mobility as a function of electron temperature. We show that expressing the electron drift mobility as a function of electron energy reduces such unphysical results.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
