Taijun Liu, Yan Ye, Xingbin Zeng, S. Boumaiza, Jiaming He, F. Ghannouchi
{"title":"Spectral Methods for Accurate Identification and Quantification of Memory Effects of Wideband RF Power Amplifiers","authors":"Taijun Liu, Yan Ye, Xingbin Zeng, S. Boumaiza, Jiaming He, F. Ghannouchi","doi":"10.1109/ICMMT.2007.381477","DOIUrl":null,"url":null,"abstract":"In this paper, a spectral method based on the memoryless predistortion technique is presented to identify accurately the memory effects of wideband RF power amplifiers stimulated by practical modulated signals. According to this new definition of the memory effects, a novel metric to measure quantitatively the memory effects in wideband power amplifiers is proposed. With the proposed memory effect metrics, the intensity of the memory effects for different power amplifiers, under a variety of the excitation modulated signals, can be quantitatively evaluated.","PeriodicalId":409971,"journal":{"name":"2007 International Conference on Microwave and Millimeter Wave Technology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2007-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Microwave and Millimeter Wave Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2007.381477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, a spectral method based on the memoryless predistortion technique is presented to identify accurately the memory effects of wideband RF power amplifiers stimulated by practical modulated signals. According to this new definition of the memory effects, a novel metric to measure quantitatively the memory effects in wideband power amplifiers is proposed. With the proposed memory effect metrics, the intensity of the memory effects for different power amplifiers, under a variety of the excitation modulated signals, can be quantitatively evaluated.