A-PLR: Accumulative backup of mapping information for power loss recovery

Sangyong Lee, Sanghyuk Jung, Y. Song
{"title":"A-PLR: Accumulative backup of mapping information for power loss recovery","authors":"Sangyong Lee, Sanghyuk Jung, Y. Song","doi":"10.1109/ICNIDC.2010.5657783","DOIUrl":null,"url":null,"abstract":"In NAND flash memory based storage systems, a flash translation layer (FTL) is usually employed to hide shortcomings of NAND flash memory such as erase-before-write and asymmetric read/write response time. Although there are several types of FTLs according to the mapping granularity, it is a recent trend to use a page-level mapping FTL. There are two basic methods of power loss recovery (PLR) schemes for page-level mapping FTL: per-page-unit method and the map block-unit method; however, these methods have shortcomings in term of the recovery time and the mapping information management overhead, respectively. In order to overcome disadvantages of PLR, thus, we propose a novel PLR, named accumulative backup of mapping information for power loss recovery (A-PLR), which provides a stable data recovery performance without any management overhead.","PeriodicalId":348778,"journal":{"name":"2010 2nd IEEE InternationalConference on Network Infrastructure and Digital Content","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 2nd IEEE InternationalConference on Network Infrastructure and Digital Content","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICNIDC.2010.5657783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In NAND flash memory based storage systems, a flash translation layer (FTL) is usually employed to hide shortcomings of NAND flash memory such as erase-before-write and asymmetric read/write response time. Although there are several types of FTLs according to the mapping granularity, it is a recent trend to use a page-level mapping FTL. There are two basic methods of power loss recovery (PLR) schemes for page-level mapping FTL: per-page-unit method and the map block-unit method; however, these methods have shortcomings in term of the recovery time and the mapping information management overhead, respectively. In order to overcome disadvantages of PLR, thus, we propose a novel PLR, named accumulative backup of mapping information for power loss recovery (A-PLR), which provides a stable data recovery performance without any management overhead.
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A-PLR:用于断电恢复的映射信息累积备份
在基于NAND闪存的存储系统中,通常采用一个闪存转换层(FTL)来掩盖NAND闪存的缺点,如写前擦除和读写响应时间不对称。虽然根据映射粒度有几种类型的FTL,但最近的趋势是使用页面级映射FTL。页级映射FTL的功率损耗恢复(PLR)方案有两种基本方法:逐页单元法和映射块单元法;但是,这些方法分别在恢复时间和映射信息管理开销方面存在不足。因此,为了克服PLR的缺点,我们提出了一种新的PLR,即映射信息累加备份用于功率损失恢复(a -PLR),它提供了稳定的数据恢复性能,并且没有任何管理开销。
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