L. Lo, M. Hatta, N. Andoh, H. Nagayoshi, K. Kamisako
{"title":"Preparation of high-quality /spl mu/c-Si:H films by a hydrogen-radical CVD method [solar cells]","authors":"L. Lo, M. Hatta, N. Andoh, H. Nagayoshi, K. Kamisako","doi":"10.1109/PVSC.1997.654173","DOIUrl":null,"url":null,"abstract":"Undoped, phosphorus-, and boron-doped microcrystalline silicon (/spl mu/c-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of /spl mu/c-Si:H films were investigated. Doped /spl mu/c-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Undoped, phosphorus-, and boron-doped microcrystalline silicon (/spl mu/c-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of /spl mu/c-Si:H films were investigated. Doped /spl mu/c-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9.
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