{"title":"GaN Gunn diodes for THz signal generation","authors":"E. Alekseev, D. Pavlidis","doi":"10.1109/MWSYM.2000.862354","DOIUrl":null,"url":null,"abstract":"The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.862354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 31
Abstract
The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.
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