{"title":"Physical model for the diffusion of ion implanted boron and BF/sub 2/ during rapid thermal annealing","authors":"H. Kinoshita, D. Kwong","doi":"10.1109/IEDM.1992.307333","DOIUrl":null,"url":null,"abstract":"The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF/sub 2/ implant doses.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF/sub 2/ implant doses.<>
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