Effects of wet cleaning treatment on dose of impurity after plasma doping

Abstract

Plasma doping is a promising candidate to realize ultra shallow junctions for future small scale CMOS devices. Wet cleaning processes were investigated on shallow boron doped layers, formed by the plasma doping method, in this work. The three kinds of cleaning processes such as diluted HF, APM and SPM were used for as doped samples, and the loss of boron after thermal annealing between these cleaning processes was compared . It was found that the diluted HF cleaning exhibited a large decrease of boron dose while the SPM cleaning exhibited a suppression of loss of boron dose. It was speculated that inclusion of boron into the chemical oxide layer formed by the SPM treatment contributed to the suppression of loss of boron in the following annealing process.