Effect of Heat Treatment on the Photosensitive Structures CuInSe2

Abstract

Photosensitive structures were produced by heat treatment of polycrystalline p - and n - CuInSe2 in vacuum and in air polycrystalline substrates at temperatures near 500°C. The spectral dependence of photosensitivity of the two types of structures in natural and linearly polarized radiation were investigated and analyzed. T photosensitivity of the best structures reaches 16 mA/W at T = 300 K. The laws of polarization photosensitivity of such structures were determined and discussed in relation to the fabrication conditions of the structures. It was concluded that there is a new possibility of using polarized photoelectric spectroscopy for diagnostics of phase interactions in complex semiconductors and for optimizing the technology for producing photoconversion structures.