Simulating the Conducted EM Emissions of a Synchronous Buck Converter using an 80V GaN Half Bridge Power Stage

S. Muff, L. Eichinger, H. Barnes
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Abstract

A recently published paper [1] on the analytical modeling of the conducted EM Emissions of a synchronous Buck converter for different voltage ratios demonstrates a behavioral model to predict the emitted spectrum for GaN and SiC based buck converters. The results show reasonable agreement between analytical predicted and measured conducted EM spectrum. This presentation shows an alternative methodology focusing on the layout implementation of the converter stage based on a commercially available EM extraction tool. This solution benefits from a respective switch model included in the software, offering a fast representation of the switching behavior without the need of using SPICE models for the switching devices. The results indicate that this methodology enables accurate prediction of the conducted EM spectrum on a virtual level, offering a deeper insight into the parasitic effects of the layout and can reduce the number of hardware iteration cycles.
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用80V GaN半桥功率级模拟同步降压变换器的传导电磁发射
最近发表的一篇论文[1]对同步降压变换器在不同电压比下的传导电磁发射进行了分析建模,展示了一种预测GaN和SiC基降压变换器发射光谱的行为模型。结果表明,分析预测结果与实测结果吻合较好。本演示展示了一种基于商用电磁提取工具的转换器级布局实现的替代方法。该解决方案得益于软件中包含的相应开关模型,提供了开关行为的快速表示,而无需为交换设备使用SPICE模型。结果表明,该方法可以在虚拟水平上准确预测传导电磁频谱,从而更深入地了解布局的寄生效应,并可以减少硬件迭代周期的次数。
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