I. Gamba, A. Majorana, J. A. Morales, Chi-Wang Shu
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引用次数: 1
Abstract
The present work is motivated by the development of a fast DG based deterministic solver for the extension of the BTE to a system of transport Boltzmann equations for full electronic multiband transport with intraband scattering mechanisms. Our proposed method allows to find scattering effects of high complexity, such as anisotropic electronic bands or full band computations, by simply using the standard routines of a suitable Monte Carlo approach only once. In this short paper, we restrict our presentation to the single band problem as it will be also valid in the multiband system as well. We present preliminary numerical tests of this method using the Kane energy band model, for a 1-D 400nm n+ - n - n+ silicon channel diode, showing moments at t = 0.5ps and t = 3.0ps.
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