Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242821
G. Albareda, F. Traversa, A. Benali, X. Oriols
Power dissipation constitutes a major constriction in modern and future nanoelectronic design [1]. In this context, predictive models elucidating new criterions to control Joule heating would be valuable. In this work we reveal how an accurate formulation of the many-body Coulomb correlations among carriers can lead to new perspectives on the design of power-optimized electron devices. In particular, we show that for a ballistic semi-classical system the rate at which carriers gain (or loose) kinetic energy is a function of carrier-carrier correlations and differs in general from the expected value (I)· (ΔV).
{"title":"Towards the control of power dissipation through the use of many-body Coulomb correlations","authors":"G. Albareda, F. Traversa, A. Benali, X. Oriols","doi":"10.1109/IWCE.2012.6242821","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242821","url":null,"abstract":"Power dissipation constitutes a major constriction in modern and future nanoelectronic design [1]. In this context, predictive models elucidating new criterions to control Joule heating would be valuable. In this work we reveal how an accurate formulation of the many-body Coulomb correlations among carriers can lead to new perspectives on the design of power-optimized electron devices. In particular, we show that for a ballistic semi-classical system the rate at which carriers gain (or loose) kinetic energy is a function of carrier-carrier correlations and differs in general from the expected value (I)· (ΔV).","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116837845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242855
K. Raleva, D. Vasileska, S. Goodnick
In this paper we present simulation results obtained with our electro-thermal particle-based device simulator for 25 nm fully depleted silicon-on-insulator devices with (100) and (110) crystallographic orientations. We also investigate the importance of the proper choice of the thermal conductivity model (which is particularly important for thin silicon films) in properly predicting the average maximum temperature and the maximum temperature in the hot spot which are important parameters regarding device reliability.
{"title":"Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation","authors":"K. Raleva, D. Vasileska, S. Goodnick","doi":"10.1109/IWCE.2012.6242855","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242855","url":null,"abstract":"In this paper we present simulation results obtained with our electro-thermal particle-based device simulator for 25 nm fully depleted silicon-on-insulator devices with (100) and (110) crystallographic orientations. We also investigate the importance of the proper choice of the thermal conductivity model (which is particularly important for thin silicon films) in properly predicting the average maximum temperature and the maximum temperature in the hot spot which are important parameters regarding device reliability.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129506188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242866
J. Watling, C. Riddet, A. Asenov
Acoustic phonon scattering is known to play an important role in accurately describing hole-transport in semiconductors such as Si and Ge. However, it has been difficult to treat accurately and efficiently due to its dispersion relationship, thus it is often treated as an elastic process or by using constant phonon energy. Here we present an efficient approach for handling inelastic acoustic phonon scattering taking into account the full dispersion relationship. The proposed method unlike previous methods makes no assumption about the carrier distribution function, thus it is suitable for application within a device environment. The model is able to reproduce accurately the velocity-field characteristics over a wide-range of temperatures.
{"title":"Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations","authors":"J. Watling, C. Riddet, A. Asenov","doi":"10.1109/IWCE.2012.6242866","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242866","url":null,"abstract":"Acoustic phonon scattering is known to play an important role in accurately describing hole-transport in semiconductors such as Si and Ge. However, it has been difficult to treat accurately and efficiently due to its dispersion relationship, thus it is often treated as an elastic process or by using constant phonon energy. Here we present an efficient approach for handling inelastic acoustic phonon scattering taking into account the full dispersion relationship. The proposed method unlike previous methods makes no assumption about the carrier distribution function, thus it is suitable for application within a device environment. The model is able to reproduce accurately the velocity-field characteristics over a wide-range of temperatures.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129341474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242846
A. Mazurak, B. Majkusiak
In this work, we present a theoretical derivation of the analytical formula for tunneling probability through an n-layer barrier basing on the Wentzel-Kramers-Brillouin (WKB) and the effective mass approximations. The accuracy of the derived formula is analysed by comparison with the transfer matrix method (TMM). The effect of the electric charge distribution in a stack on the tunnel current is considered.
{"title":"WKB approximation based formula for tunneling probability through a multi-layer potential barrier","authors":"A. Mazurak, B. Majkusiak","doi":"10.1109/IWCE.2012.6242846","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242846","url":null,"abstract":"In this work, we present a theoretical derivation of the analytical formula for tunneling probability through an n-layer barrier basing on the Wentzel-Kramers-Brillouin (WKB) and the effective mass approximations. The accuracy of the derived formula is analysed by comparison with the transfer matrix method (TMM). The effect of the electric charge distribution in a stack on the tunnel current is considered.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126266421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242848
M. Nedjalkov, P. Schwaha, S. Selberherr, D. Ferry, D. Vasileska, P. Dollfus, D. Querlioz
A relation called scaling theorem is formulated, which estimates how physical scales determine the choice between classical and quantum transport regimes.
一个称为尺度定理的关系被公式化，它估计物理尺度如何决定经典和量子输运制度之间的选择。
{"title":"Role of the physical scales on the transport regime","authors":"M. Nedjalkov, P. Schwaha, S. Selberherr, D. Ferry, D. Vasileska, P. Dollfus, D. Querlioz","doi":"10.1109/IWCE.2012.6242848","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242848","url":null,"abstract":"A relation called scaling theorem is formulated, which estimates how physical scales determine the choice between classical and quantum transport regimes.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125968453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242860
P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov
Particle simulation techniques utilizing classical or quantum weights commonly involve a phase space grid for the calculation of averages. Properties of alternative particle-grid simulation strategies are investigated by using an experiment highly sensitive to variance. It is provided by the fine structure of entangled electron states subject to scattering with phonons. As the process of evolution describes decoherence and transition from quantum to classical our analysis concerns both transport regimes. An algorithm based on randomization-annihilation of particles shows better performance than an Ensemble Monte Carlo method.
{"title":"Particle-grid techniques for semiclassical and quantum transport simulations","authors":"P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov","doi":"10.1109/IWCE.2012.6242860","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242860","url":null,"abstract":"Particle simulation techniques utilizing classical or quantum weights commonly involve a phase space grid for the calculation of averages. Properties of alternative particle-grid simulation strategies are investigated by using an experiment highly sensitive to variance. It is provided by the fine structure of entangled electron states subject to scattering with phonons. As the process of evolution describes decoherence and transition from quantum to classical our analysis concerns both transport regimes. An algorithm based on randomization-annihilation of particles shows better performance than an Ensemble Monte Carlo method.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131870002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242833
A. L. Rodriguez, S. Rodríguez-Bolívar, F. Gómez-Campos
A study of the intraband absorption coefficient in cuboid InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the shape of the quantum dots. The effect of strain is also taken into account in the simulations through a previous 8×8 k·p calculation. We analyze the influence on the absorption coefficient on the miniband structure of the systems.
{"title":"Photon absorption in regimented quantum dot arrays","authors":"A. L. Rodriguez, S. Rodríguez-Bolívar, F. Gómez-Campos","doi":"10.1109/IWCE.2012.6242833","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242833","url":null,"abstract":"A study of the intraband absorption coefficient in cuboid InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the shape of the quantum dots. The effect of strain is also taken into account in the simulations through a previous 8×8 k·p calculation. We analyze the influence on the absorption coefficient on the miniband structure of the systems.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124394087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242840
S. Laux
The FEAST eigenvalue algorithm of Polizzi [1] is extended to solve the complex band structure problem.
将Polizzi[1]的FEAST特征值算法推广到解决复杂波段结构问题。
{"title":"FEAST for complex band structure problems","authors":"S. Laux","doi":"10.1109/IWCE.2012.6242840","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242840","url":null,"abstract":"The FEAST eigenvalue algorithm of Polizzi [1] is extended to solve the complex band structure problem.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121325958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242856
K. Rupp, P. Lagger, T. Grasser, A. Jungel
A methodology for handling carrier-carrier-scattering within the arbitrary-order spherical harmonics expansion method for computing deterministic numerical solutions of the Boltzmann transport equation is presented. Comparisons with results from Monte Carlo simulations confirm the accuracy of the proposed method for bulk silicon. Moreover, results for 22nm and 110nm MOSFET devices are presented. A significant elevation of the high-energy-tail of the distribution function is observed in the 22nm case, confirming that the inclusion of carrier-carrier-scattering is required for the investigation of hot-carrier-effects in scaled-down devices.
{"title":"Inclusion of carrier-carrier-scattering into arbitrary-order spherical harmonics expansions of the Boltzmann transport equation","authors":"K. Rupp, P. Lagger, T. Grasser, A. Jungel","doi":"10.1109/IWCE.2012.6242856","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242856","url":null,"abstract":"A methodology for handling carrier-carrier-scattering within the arbitrary-order spherical harmonics expansion method for computing deterministic numerical solutions of the Boltzmann transport equation is presented. Comparisons with results from Monte Carlo simulations confirm the accuracy of the proposed method for bulk silicon. Moreover, results for 22nm and 110nm MOSFET devices are presented. A significant elevation of the high-energy-tail of the distribution function is observed in the 22nm case, confirming that the inclusion of carrier-carrier-scattering is required for the investigation of hot-carrier-effects in scaled-down devices.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125681307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-22DOI: 10.1109/IWCE.2012.6242865
A. Benali, F. Traversa, G. Albareda, M. Aghoutane, X. Oriols
The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices, to tackle this problem. Analytical and Monte Carlo (MC) simulations show how the HF spectrum noticeably depends on the ratio between lateral (Ly, Lz) and longitudinal (Lx) dimensions of a gate-all-around transistor.
{"title":"Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors","authors":"A. Benali, F. Traversa, G. Albareda, M. Aghoutane, X. Oriols","doi":"10.1109/IWCE.2012.6242865","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242865","url":null,"abstract":"The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices, to tackle this problem. Analytical and Monte Carlo (MC) simulations show how the HF spectrum noticeably depends on the ratio between lateral (Ly, Lz) and longitudinal (Lx) dimensions of a gate-all-around transistor.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122797810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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