R. Narayanan, Z. Latif, A. Ortiz-Conde, J. Liou, L. Golovanova, W. Wong, F. Garcia Sanchez
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引用次数: 1
Abstract
A model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel dopant, is verified with two-dimensional simulation results. The simulated results, in agreements with experimental measurements, reveal that the magnitude of the threshold voltage versus the mask channel length present a maximum value.
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