The compact all-region MOSFET model: theory and applications

Abstract

A compact presentation of the basic theory of the MOS transistor is given. Instead of the usual approach of furnishing separate analytical formulas for the strong and weak inversion regions of the MOS transistor, we provide simple formulas which are valid in all operating regions, including moderate inversion. We review ultra-low-power circuits operating near the threshold condition that allow the automatic extraction of the specific current IS and the threshold voltage VT of MOS transistors, which are the most fundamental parameters for technology characterization, circuit design, and testing.