AlGaN/GaN HEMTs for energy efficient systems

Abstract

Materials properties of nitride semiconductors make them superior candidates for power electronics applications. Materials quality, strongly non-uniform field distribution, variations of parameters from device to device, and reliability problems have to be improved or resolved. New designs, especially suitable to nitride devices, include the use of Low Conducting Layers, “composite channel structures, and novel contacts. All these improvement still have to be validated and improved to make the dream of nitride power electronics to be competitive with Si and SiC power transistors.