0.5 V, Low Power, 1 MHz Low Pass Filter in 0.18 µm CMOS Process

H. VasanthaM., T. Laxminidhi
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引用次数: 4

Abstract

In this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achieve necessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common mode feedback(CMFB) circuit sets the output common mode voltage of transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%.
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0.5 V,低功耗,1 MHz低通滤波器,0.18µm CMOS工艺
本文介绍了一种工作在0.5 V电源下的低功率连续4阶巴特沃斯滤波器。采用0.18 μm的技术节点,实现了1mhz的3db带宽。为了获得必要的头部空间,滤波器采用了伪差分体驱动的晶体管。一个基于主从共模反馈(CMFB)电路设定了晶体管的输出共模电压。仿真结果表明,当电源电压为0.5 V时,滤波器的动态范围为54 dB,总功耗为36 μW。该滤波器的优值(FOM)为0.05 fJ,在文献中发现的类似低压滤波器中最低。仿真结果表明,工艺、电压和温度对3db带宽的影响小于±10%。
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