H. Kunz, R. Steinhoff, C. Duvvury, G. Boselli, L. Ting
{"title":"The effect of high pin-count ESD tester parasitics on transiently triggered ESD clamps","authors":"H. Kunz, R. Steinhoff, C. Duvvury, G. Boselli, L. Ting","doi":"10.1109/EOSESD.2004.5272619","DOIUrl":null,"url":null,"abstract":"Conflicting HBM ESD results are presented for several ESD testers/test-configurations, all of which pass the present tester specifications. The discrepancy is attributed to parasitic capacitance, which can deactivate the dV/dt-detection of an ESD circuit. An unexpectedly large (>1 nF) effective parallel capacitance is found by summing tester relay capacitances of unstressed pins, connected through on-chip current paths, while considering the Miller effect. An ESD strike between two pins and the symmetric \"reverse-pin, reverse-polarity\" strike are shown to be nonequivalent due to a different set of on-chip current paths.","PeriodicalId":302866,"journal":{"name":"2004 Electrical Overstress/Electrostatic Discharge Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Electrical Overstress/Electrostatic Discharge Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2004.5272619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Conflicting HBM ESD results are presented for several ESD testers/test-configurations, all of which pass the present tester specifications. The discrepancy is attributed to parasitic capacitance, which can deactivate the dV/dt-detection of an ESD circuit. An unexpectedly large (>1 nF) effective parallel capacitance is found by summing tester relay capacitances of unstressed pins, connected through on-chip current paths, while considering the Miller effect. An ESD strike between two pins and the symmetric "reverse-pin, reverse-polarity" strike are shown to be nonequivalent due to a different set of on-chip current paths.