{"title":"Influence of processing parameter on nanoscale anodic oxidation by AFM","authors":"Y. Leng, Lianhe Dong, Yanjun Sun, Zhe Chen, Z. Ma","doi":"10.1109/3M-NANO.2012.6473008","DOIUrl":null,"url":null,"abstract":"Combining the pressure sensor's oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation nano-fabrication. Experimental results show that the size of oxide dots increases with the increasing bias voltage and ambient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of oxide dot; ambient temperature 22 °C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable processing parameters for the oxidation fabrication of n-type Si (100).","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3M-NANO.2012.6473008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Combining the pressure sensor's oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation nano-fabrication. Experimental results show that the size of oxide dots increases with the increasing bias voltage and ambient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of oxide dot; ambient temperature 22 °C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable processing parameters for the oxidation fabrication of n-type Si (100).