A Discontinuous Galerkin Scheme for Transient Multiphysics Simulation of Organic Electrochemical Transistors

Abstract

A time domain discontinuous Galerkin (DGTD)-based framework is developed to analyze three-dimensional organic electrochemical transistors (OECTs). The proposed framework uses a local DG scheme to discretize the (non-linearly) coupled system of the Poisson equation (in electric potential) and the drift-diffusion (DD) equations (in charge densities) in space. To reduce the computational requirements, a dual-mesh scheme, which uses a dense mesh for the DD equations and a much coarser mesh for the Poisson equation, is used. Furthermore, an implicit-explicit time integration scheme, which allows for a significantly larger time-step size, is utilized to efficiently account for the extremely long response time of OECTs. Numerical results are provided to demonstrate the applicability and accuracy of the proposed solver.