S. Zhang, Y. Liu, G. Han, J. Zhang, Y. Hao, X. Wang
{"title":"Electrical characteristics of 2D MoS2 ferroelectric memory transistor with ferroelectric Hf1-xZrxO2 gate structure","authors":"S. Zhang, Y. Liu, G. Han, J. Zhang, Y. Hao, X. Wang","doi":"10.7567/ssdm.2019.d-6-04","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/ssdm.2019.d-6-04","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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