Comparison of high-frequency performance of quasi-SOI and conventional SOI power MOSFETs

Abstract

We have compared the radio-frequency performance of quasi-SOI and conventional SOI power MOSFETs based on experimentally obtained results and numerical simulation. The quasi-SOI power MOSFET proved to be superior because the activation of the parasitic bipolar transistor was suppressed. We clarified, through a numerical simulation, that the parasitic bipolar effect causes harmonics generation. Especially, the third-order intermodulation distortion of the quasi-SOI device was about 15 dBc lower than that of the conventional SOI device under 2 GHz operation.