Ningjie Li, Yuluan Wu, Lei Chen, Baozhen Wu, Cheng Zhao, Y. Wang, Yue Sun
{"title":"A novel bump-CPW-bump structure for interconnection/transition of RF MEMS packaging","authors":"Ningjie Li, Yuluan Wu, Lei Chen, Baozhen Wu, Cheng Zhao, Y. Wang, Yue Sun","doi":"10.1109/ICEPT.2015.7236712","DOIUrl":null,"url":null,"abstract":"A novel 1-level interconnection/transition method for radio frequency micro-electronic-mechanic system (RF MEMS) devices is proposed in this paper. Using bump-CPW-bump structure which is composed of a chip substrate, a coplanar waveguide (CPW) transmission line fabricated on the substrate and a group of metal bumps set on the ends of the CPW line, this method combines the advantages of both flip-chip and through-silicon via (TSV) techniques. The results of the finite element method (FEM) analysis show that this interconnection/ transition structure has good characteristics of return loss and insertion loss over a broad frequency range compared with both TSV and wire-bonding structures.","PeriodicalId":415934,"journal":{"name":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2015.7236712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A novel 1-level interconnection/transition method for radio frequency micro-electronic-mechanic system (RF MEMS) devices is proposed in this paper. Using bump-CPW-bump structure which is composed of a chip substrate, a coplanar waveguide (CPW) transmission line fabricated on the substrate and a group of metal bumps set on the ends of the CPW line, this method combines the advantages of both flip-chip and through-silicon via (TSV) techniques. The results of the finite element method (FEM) analysis show that this interconnection/ transition structure has good characteristics of return loss and insertion loss over a broad frequency range compared with both TSV and wire-bonding structures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
