{"title":"Inclusion of carrier-carrier-scattering into arbitrary-order spherical harmonics expansions of the Boltzmann transport equation","authors":"K. Rupp, P. Lagger, T. Grasser, A. Jungel","doi":"10.1109/IWCE.2012.6242856","DOIUrl":null,"url":null,"abstract":"A methodology for handling carrier-carrier-scattering within the arbitrary-order spherical harmonics expansion method for computing deterministic numerical solutions of the Boltzmann transport equation is presented. Comparisons with results from Monte Carlo simulations confirm the accuracy of the proposed method for bulk silicon. Moreover, results for 22nm and 110nm MOSFET devices are presented. A significant elevation of the high-energy-tail of the distribution function is observed in the 22nm case, confirming that the inclusion of carrier-carrier-scattering is required for the investigation of hot-carrier-effects in scaled-down devices.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 15th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2012.6242856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A methodology for handling carrier-carrier-scattering within the arbitrary-order spherical harmonics expansion method for computing deterministic numerical solutions of the Boltzmann transport equation is presented. Comparisons with results from Monte Carlo simulations confirm the accuracy of the proposed method for bulk silicon. Moreover, results for 22nm and 110nm MOSFET devices are presented. A significant elevation of the high-energy-tail of the distribution function is observed in the 22nm case, confirming that the inclusion of carrier-carrier-scattering is required for the investigation of hot-carrier-effects in scaled-down devices.
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