Investigation of role of antisite disorder in pristine cage compound FeGa$_3$

Cauê Kaufmann Ribeiro, L. Mello, V. Martelli, D. Cornejo, M. B. Silva Neto, E. Fogh, H. Rønnow, Julio Antonio Larrea Jiménez
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Abstract

The role of controlled Fe antisite disorder in the narrow gap semiconductor FeGa_33 has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations from occupation numbers of Fe and Ga sites expected in the pristine compound were obtained from X-ray data using Rietveld refinement analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa_33 from paramagnetic semiconductor to a magnetic metal. These findings are discussed inside the framework of Anderson localization in the vicinity of metal-semiconductor transitions and spin fluctuations.
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原始笼型化合物FeGa$_3$反位紊乱作用的研究
研究了窄隙半导体FeGa_33中受控铁反位无序的作用。采用电弧熔炼炉和连续退火相结合的方法合成了多晶样品。使用Rietveld细化分析从x射线数据中获得原始化合物中预期的Fe和Ga位点的占用数的偏差。此外,电输运和磁化测量表明,Fe和Ga位无序的层次结构使FeGa_33的基态从顺磁性半导体转变为磁性金属。这些发现在金属半导体跃迁和自旋涨落附近的安德森局域化框架内进行了讨论。
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