DC-1GHz Low-Pass Filters Using GaAs Integrated Passive Device Technology

Biao Deng, Yang Chen, Liguo Sun
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引用次数: 2

Abstract

This paper discusses the design of lumped elements low pass filter (LPF) in DC-1GHz range with GaAs integrated passive device (IPD) technology. Two shunt capacitors are added to the inductors to create transmission zeros at about 2.1GHz and 3.4GHz. The filter designed by this method has a simple structure, a small area, and high out-of-band rejection. The fabricated low pass filter has insertion loss of 0.8 dB and harmonic rejections of 40 dB with die size of 592um*1130um including pads.
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采用GaAs集成无源器件技术的DC-1GHz低通滤波器
本文讨论了采用GaAs集成无源器件(IPD)技术设计DC-1GHz范围内的集总元件低通滤波器(LPF)。在电感器上添加两个并联电容器,以创建约2.1GHz和3.4GHz的传输零点。该方法设计的滤波器结构简单,面积小,带外抑制能力强。所制低通滤波器的插入损耗为0.8 dB,谐波抑制为40 dB,含焊片的芯片尺寸为592um*1130um。
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