Heterodimensional MESFETs for ultra low power electronics

Abstract

Revolutionary change in electronics technology will be required to meet the pressing need to dramatically reduce the power consumption of large scale integrated circuits in future low power applications such as wireless communications and other portable electronics. Our approach for realizing such change is to utilize novel two-dimensional metal-semiconductor field effect transistors (2-D MESFETs), which not only can be scaled to deep sub-micron dimensions without suffering severe narrow channel and short channel effects, but also offer new ways to implement basic logic functions using far fewer transistors than are currently required. In addition to lower power consumption and greater functionality, these new architectures should dramatically simplify the design process and allow much denser packing. In this paper we present the heterodimensional technology in general and in particular the 2D MESFET which is one of the devices based on this technology. Furthermore, we explore the advantages of utilizing this device in an integrated circuit environment.