L. Xu, S. Shibayama, Kazutaka Izukashi, T. Nishimura, T. Yajima, S. Migita, A. Toriumi
{"title":"General relationship for cation and anion doping effects on ferroelectric HfO2 formation","authors":"L. Xu, S. Shibayama, Kazutaka Izukashi, T. Nishimura, T. Yajima, S. Migita, A. Toriumi","doi":"10.1109/IEDM.2016.7838477","DOIUrl":null,"url":null,"abstract":"This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO2 ferroelectricity design. In addition, ferroelectric N-doped HfO2 has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO2 ferroelectricity design. In addition, ferroelectric N-doped HfO2 has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).
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