N. Guo, Weida Hu, Xiaoshuang Chen, Y. Lv, Xiaoliu Zhang, J. Si, W. Lu
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引用次数: 0
Abstract
The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb.
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