{"title":"On approach to increase integration rate of elements of an element AND-NOT with three inputs","authors":"E. Pankratov","doi":"10.33545/27076636.2023.v4.i1a.78","DOIUrl":null,"url":null,"abstract":"In this paper we introduce an approach to increase integration rate of elements of an element AND-NOT with three inputs. In the framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized","PeriodicalId":127185,"journal":{"name":"International Journal of Computing, Programming and Database Management","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Computing, Programming and Database Management","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.33545/27076636.2023.v4.i1a.78","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper we introduce an approach to increase integration rate of elements of an element AND-NOT with three inputs. In the framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized
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