Tan Kai-zhou, Tang Zhaohuan, Luo Jun, Hu Shendong, Shen Jun, Cui Wei, Zhang Jin
{"title":"A novel 600V structure with Split P-Buried Floating Layer and doping trench","authors":"Tan Kai-zhou, Tang Zhaohuan, Luo Jun, Hu Shendong, Shen Jun, Cui Wei, Zhang Jin","doi":"10.1109/TENCON.2013.6718849","DOIUrl":null,"url":null,"abstract":"A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm2 to 41.7 mO.cm2.","PeriodicalId":425023,"journal":{"name":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.2013.6718849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm2 to 41.7 mO.cm2.
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