{"title":"Characterization of solderable metallization on power devices for 3-D packaging","authors":"S. Haque, G. Lu","doi":"10.1109/IWIPP.2000.885188","DOIUrl":null,"url":null,"abstract":"This paper presents processing issues of solderable metallization on two different IGBTs (insulated gate bipolar transistors) for three-dimensional packaging. Identical metallization processes via sputtering have resulted in different contact resistances due to the different passivation materials (Si/sub 3/N/sub 4/ and polyimide) of the two devices. XPS and SEM characterization of surface compositions of device contact pads resulting in different electrical contact resistances are analyzed.","PeriodicalId":359131,"journal":{"name":"IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWIPP.2000.885188","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents processing issues of solderable metallization on two different IGBTs (insulated gate bipolar transistors) for three-dimensional packaging. Identical metallization processes via sputtering have resulted in different contact resistances due to the different passivation materials (Si/sub 3/N/sub 4/ and polyimide) of the two devices. XPS and SEM characterization of surface compositions of device contact pads resulting in different electrical contact resistances are analyzed.
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