A novel 1700V RET-IGBT (recessed emitter trench IGBT) shows record low VCE(ON), enhanced current handling capability and short circuit robustness

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988932

I. Deviny, H. Luo, Q. Xiao, Yao Yao, Chunlin Zhu, L. Ngwendson, Haibo Xiao, X. Dai, Guoyou Liu

引用次数: 10

Abstract

In this paper, a novel 1700V recessed emitter trench IGBT (RET-IGBT) is proposed. The RET-IGBT features an additional recessed trench between two adjacent active trenches and under the emitter contact, which reduces the drawn trench to trench separation from 6μm to 2μm. Combined with a double-dose carrier storage (CS) layers, the injection enhancement effect is enhanced. As a result, the trade-off relationship between Vce(on) and £off is improved. The fabricated RET-IGBT shows record low Vce(on) of 1.65V at 150A(110A/cm−2), no degradation in breakdown voltage and short circuit performances whilst enhancing the current handling capability in spite of increased current density.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

一种新颖的1700V RET-IGBT(嵌入式发射极沟槽IGBT)具有创纪录的低VCE(ON)，增强的电流处理能力和短路鲁棒性

本文提出了一种新型的1700V凹槽发射极沟槽型IGBT (RET-IGBT)。RET-IGBT在两个相邻的有源沟槽之间和发射极触点下方增加了一个凹槽，从而将绘制沟槽到沟槽的距离从6μm减少到2μm。与双剂量载流子存储层(CS)相结合，增强了注射增强效果。因此，Vce(on)和£off之间的权衡关系得到了改善。制备的RET-IGBT在150A(110A/cm−2)下显示出1.65V的低Vce(on)，击穿电压和短路性能没有下降，同时增强了电流处理能力，尽管电流密度增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

自引率

0.00%

发文量

期刊最新文献

Message from the general chair Pressure contact multi-chip packaging of SiC Schottky diodes Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT Design considerations of vertical GaN nanowire Schottky barrier diodes Chip-on-board assembly of 800V Si L-IGBTs for high performance ultra-compact LED drivers