{"title":"A Low Complexity Active Gate Driver to Damp the Oscillations Caused by Switching Power Transistors","authors":"Erica Raviola, F. Fiori","doi":"10.1109/speedam53979.2022.9842166","DOIUrl":null,"url":null,"abstract":"The reduction of overshoots/undershoots and oscillations affecting the switching waveforms in hard-switched power circuits can be achieved by exploiting Active Gate Drivers (AGDs). The ones proposed so far are featured by a large number of driving levels and time intervals, resulting in time-consuming optimization procedures. In this work, an AGD featuring two degrees of freedom is proposed and its effectiveness is experimentally validated. To this purpose, the undershoot affecting the drain-source voltage is considered as an indirect measure of oscillation damping at the power transistor turn-on.","PeriodicalId":365235,"journal":{"name":"2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM)","volume":"470 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/speedam53979.2022.9842166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The reduction of overshoots/undershoots and oscillations affecting the switching waveforms in hard-switched power circuits can be achieved by exploiting Active Gate Drivers (AGDs). The ones proposed so far are featured by a large number of driving levels and time intervals, resulting in time-consuming optimization procedures. In this work, an AGD featuring two degrees of freedom is proposed and its effectiveness is experimentally validated. To this purpose, the undershoot affecting the drain-source voltage is considered as an indirect measure of oscillation damping at the power transistor turn-on.