New 1200 V power modules with sophisticated trench gate IGBT and superior soft recovery diode

Abstract

A new PT-type trench gate IGBT has been developed using a local lifetime control in the n+ buffer layer. A prototype was developed after analyzing the device and estimating its characteristics using simulation. Both the result of simulation and that of measurement of the prototype have matched. Though the chip area is about 40/spl sim/50% smaller than the conventional IGBT, the newly developed IGBT's on-state voltage is about two-thirds (1.8 V, typically), its switching loss is about 80%, and has a larger reverse bias switching withstand capability. Also, a high-speed diode with excellent soft recovery characteristic was developed using local lifetime control in anode-side n-layer. As a result, a reduction of surge voltage, noise, and switching power loss has been achieved. This paper presents the structures and characteristics of the new IGBT and diode and their analysis results.