Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)

Yuxin Li, A. Huang, K. Motto
{"title":"Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)","authors":"Yuxin Li, A. Huang, K. Motto","doi":"10.1109/PEDS.1999.794567","DOIUrl":null,"url":null,"abstract":"The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability to the theoretical limitation of the device. Theoretical analysis and experimental results are presented.","PeriodicalId":254764,"journal":{"name":"Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 1999 International Conference on Power Electronics and Drive Systems. PEDS'99 (Cat. No.99TH8475)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.1999.794567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 34

Abstract

The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability to the theoretical limitation of the device. Theoretical analysis and experimental results are presented.
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发射极关断晶闸管(ETO)无缓冲器工作分析
发射极关断晶闸管(ETO)是一种在统一关断增益条件下关断GTO的GTO- mosfet混合功率半导体器件。分析了电致通无压关断失效机理,提出了将电致通无压关断能力扩展到器件理论极限的解决方案。给出了理论分析和实验结果。
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Dynamic analysis of electromechanical converters by means of the wavelet transform Analysis of the snubberless operation of the emitter turn-off thyristor (ETO) Modeling and control of automotive HID lamp ballast Voltage and current hybrid controlled PWM inverters using variable structure control Development of a fuel cell power conditioner system
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