{"title":"Applying device simulation for lifetime-controlled devices","authors":"R. Siemieniec, W. Sudkamp, J. Lutz","doi":"10.1109/ICCDCS.2002.1004041","DOIUrl":null,"url":null,"abstract":"Irradiation techniques are widely used for carrier lifetime control in power devices. Improvements of irradiated devices were usually realized by a number of experiments. The use of an extended recombination model allows improved device simulations which explain the temperature dependencies of stationary and dynamical characteristics. Due to that progress device simulation is able to support development and optimization of irradiated devices.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Irradiation techniques are widely used for carrier lifetime control in power devices. Improvements of irradiated devices were usually realized by a number of experiments. The use of an extended recombination model allows improved device simulations which explain the temperature dependencies of stationary and dynamical characteristics. Due to that progress device simulation is able to support development and optimization of irradiated devices.
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