D. A. Fauzi, Nahrul Khair Alang, M. Rashid, N. I. C. Omar, N. Hasbullah, M. R. M. Zin
{"title":"Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures","authors":"D. A. Fauzi, Nahrul Khair Alang, M. Rashid, N. I. C. Omar, N. Hasbullah, M. R. M. Zin","doi":"10.1109/ICP.2013.6687122","DOIUrl":null,"url":null,"abstract":"The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×l016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 4th International Conference on Photonics (ICP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICP.2013.6687122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×l016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
