An energy-balance model for non-isothermal device simulation

P. Ciampolini, A. Pierantoni, G. Baccarani
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引用次数: 2

Abstract

In this paper a new model, aimed at modeling heat transport in silicon devices, is presented. It relies on three energy-balance equations, derived for electrons, holes and the lattice. By means of proper assumptions, a single equation is worked out, which supplements the "standard" semiconductor equations and provides an accurate, yet simple, model, suitable for numerical simulation of non-isothermal regimes. Full 3D implementation of such a model has been carried out, and some results of electrothermal simulation are discussed.<>
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非等温装置模拟的能量平衡模型
本文提出了一种新的硅器件热传递模型。它依赖于三个能量平衡方程,分别为电子、空穴和晶格导出。通过适当的假设,得出了一个方程,它补充了“标准”半导体方程,并提供了一个准确而简单的模型,适合于非等温状态的数值模拟。对该模型进行了全三维实现,并讨论了电热模拟的一些结果
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