{"title":"An energy-balance model for non-isothermal device simulation","authors":"P. Ciampolini, A. Pierantoni, G. Baccarani","doi":"10.1109/IEDM.1992.307463","DOIUrl":null,"url":null,"abstract":"In this paper a new model, aimed at modeling heat transport in silicon devices, is presented. It relies on three energy-balance equations, derived for electrons, holes and the lattice. By means of proper assumptions, a single equation is worked out, which supplements the \"standard\" semiconductor equations and provides an accurate, yet simple, model, suitable for numerical simulation of non-isothermal regimes. Full 3D implementation of such a model has been carried out, and some results of electrothermal simulation are discussed.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"288 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper a new model, aimed at modeling heat transport in silicon devices, is presented. It relies on three energy-balance equations, derived for electrons, holes and the lattice. By means of proper assumptions, a single equation is worked out, which supplements the "standard" semiconductor equations and provides an accurate, yet simple, model, suitable for numerical simulation of non-isothermal regimes. Full 3D implementation of such a model has been carried out, and some results of electrothermal simulation are discussed.<>