{"title":"Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells","authors":"S. Du, L. Fu, H. Tan, C. Jagadish","doi":"10.1109/ICONN.2008.4639238","DOIUrl":null,"url":null,"abstract":"In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"191 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Nanoscience and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICONN.2008.4639238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.
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