Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639286
Haidong Zheng, M. Breedon, K. Kalantar-zadeh
Aligned ZnO nanorod arrays films were grown on LiNbO3 substrates by aqueous growth, and subsequently rendered superhydrophobic with RF sputtered coated Teflon. The as-prepared surface exhibits superhydrophobicity with a water contact angle (CA) of 154.5deg. After 2 hours of UV irradiation on the surface, the surface wettability was approaching hydrophilic state; CA was measured to be 113deg. This study provides insights into the methodology of a low cost, efficient technique that has great potential for preparing nanostructured surface with tunable wettability.
{"title":"UV-induced wettability change of teflon-modified ZnO nanorod arrays on LiNbO3 substrate","authors":"Haidong Zheng, M. Breedon, K. Kalantar-zadeh","doi":"10.1109/ICONN.2008.4639286","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639286","url":null,"abstract":"Aligned ZnO nanorod arrays films were grown on LiNbO3 substrates by aqueous growth, and subsequently rendered superhydrophobic with RF sputtered coated Teflon. The as-prepared surface exhibits superhydrophobicity with a water contact angle (CA) of 154.5deg. After 2 hours of UV irradiation on the surface, the surface wettability was approaching hydrophilic state; CA was measured to be 113deg. This study provides insights into the methodology of a low cost, efficient technique that has great potential for preparing nanostructured surface with tunable wettability.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121089704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639276
Jaekwon Do, Jungmok Yoo, Yoonjung Kim, Eunkyoung Kim
An organic polymeric fluorophore, s-triazine (ST) bridged p-phenylenevinylene (PPV), was explored for a thin film sensor. The ST-PPV showed fluorescence intensity in response to the polarity of organic molecules. The fluorophore was doped in transparent polymeric binder to prepare a thin film sensor. Fluorescence intensity of the thin film sensor was dramatically changed by the polarity change of the organic vapor. Addition of titanium dioxide nanoparticles into the polymer thin film sensor enhanced dramatically the fluorescence intensity. The nanoparticle doped fluorescent thin film sensor showed large change in intensity upon exposed to different organic molecules.
{"title":"Organic fluorophores doped nanoparticles for thin film sensors","authors":"Jaekwon Do, Jungmok Yoo, Yoonjung Kim, Eunkyoung Kim","doi":"10.1109/ICONN.2008.4639276","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639276","url":null,"abstract":"An organic polymeric fluorophore, s-triazine (ST) bridged p-phenylenevinylene (PPV), was explored for a thin film sensor. The ST-PPV showed fluorescence intensity in response to the polarity of organic molecules. The fluorophore was doped in transparent polymeric binder to prepare a thin film sensor. Fluorescence intensity of the thin film sensor was dramatically changed by the polarity change of the organic vapor. Addition of titanium dioxide nanoparticles into the polymer thin film sensor enhanced dramatically the fluorescence intensity. The nanoparticle doped fluorescent thin film sensor showed large change in intensity upon exposed to different organic molecules.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115033098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639270
A. Greentree, L. M. Jong, J. Donkelaar, S. Devitt, Jared H. Cole, Ashley M. Stephens, David N. Jamieson, L. Hollenberg
Qubit transport has been identified as vital in improving quantum error correction thresholds in scalable quantum computer architectures. Introducing practical transport in the solid-state is problematic, but in phosphorus in silicon implementations we have shown an interesting adiabatic protocol for qubit transfer, coherent tunneling adiabatic passage (CTAP). Here we review the role of CTAP as a quantum wire, highlighting the protocol and the temporal scaling as the length of the transport chain is increased. We also highlight an extension of CTAP to generate spatial superposition states which demonstrates some of the flexibility of quantum electronic structures over quantum optical systems.
{"title":"Spatial adiabatic passage as a quantum wire","authors":"A. Greentree, L. M. Jong, J. Donkelaar, S. Devitt, Jared H. Cole, Ashley M. Stephens, David N. Jamieson, L. Hollenberg","doi":"10.1109/ICONN.2008.4639270","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639270","url":null,"abstract":"Qubit transport has been identified as vital in improving quantum error correction thresholds in scalable quantum computer architectures. Introducing practical transport in the solid-state is problematic, but in phosphorus in silicon implementations we have shown an interesting adiabatic protocol for qubit transfer, coherent tunneling adiabatic passage (CTAP). Here we review the role of CTAP as a quantum wire, highlighting the protocol and the temporal scaling as the length of the transport chain is increased. We also highlight an extension of CTAP to generate spatial superposition states which demonstrates some of the flexibility of quantum electronic structures over quantum optical systems.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122511598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639256
Xiaoqin Zou, G. Zhu, Hailing Guo, Hua Li, Mingyi Guo, S. Qiu, Da Xu
Brilliant blue mono-dispersed ZnS QDs have been synthesized using hydrothermal synthesis. The synthetic procedure provides some advantageous synthetic features such as a short preparation time with control over product dimensions using green conditions. These can then be organized into different special arrangements and their PL properties as well as XRD, TEM and UV-vis characterization are reported here-in.
{"title":"Green hydrothermal synthesis of high-quality ZnS quantum dots with different patterning","authors":"Xiaoqin Zou, G. Zhu, Hailing Guo, Hua Li, Mingyi Guo, S. Qiu, Da Xu","doi":"10.1109/ICONN.2008.4639256","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639256","url":null,"abstract":"Brilliant blue mono-dispersed ZnS QDs have been synthesized using hydrothermal synthesis. The synthetic procedure provides some advantageous synthetic features such as a short preparation time with control over product dimensions using green conditions. These can then be organized into different special arrangements and their PL properties as well as XRD, TEM and UV-vis characterization are reported here-in.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"2008 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125608808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639239
J. Edgar, H. Zareie, M. Blaber, A. Dowd, M. Cortie
Gold nanoshells have gained attention recently due to their versatile optical properties. In particular, their spectrally selective extinction has been exploited for experimental medical applications, functional coatings and contrast enhancement for analytical techniques. Here we discuss nanoshells and the formation of gold nanorings by the galvanic replacement of Ag nanosphere template particles. Hollow Au/Ag nanoshells can be converted to nanorings upon addition of excess HAuCl4. Nanorings present a distinct particle geometry, with optical properties exhibiting characteristics of both nanorods and nanoshells.
{"title":"Synthesis of hollow gold nanoparticles and rings using silver templates","authors":"J. Edgar, H. Zareie, M. Blaber, A. Dowd, M. Cortie","doi":"10.1109/ICONN.2008.4639239","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639239","url":null,"abstract":"Gold nanoshells have gained attention recently due to their versatile optical properties. In particular, their spectrally selective extinction has been exploited for experimental medical applications, functional coatings and contrast enhancement for analytical techniques. Here we discuss nanoshells and the formation of gold nanorings by the galvanic replacement of Ag nanosphere template particles. Hollow Au/Ag nanoshells can be converted to nanorings upon addition of excess HAuCl4. Nanorings present a distinct particle geometry, with optical properties exhibiting characteristics of both nanorods and nanoshells.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132406874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639280
P. Leech, L. McCarthy, P. Osvath
We describe the patterning of multilayered foil by irradiation with excimer laser. The foil consisted of an upper layer of lacquer/ intermediate layers of polymer and Al/ a base layer of low melting point resin. Ablation of the foil was characterised by a sequential removal of the layers in the structure. A critical level of fluence and number of pulses was required to ablate each of the additional layers. Four threshold levels of damage have been identified as i) damage to the upper lacquer layer without removal, ii) the removal of the lacquer layer, iii) the removal of the intermediate layers and iv) the removal of all layers. Measurements of the ablation depth for a single pulse have shown a logarithmic dependence on laser fluence within the upper and intermediate layers.
{"title":"Structuring of grating arrays in multilayered foil by excimer laser","authors":"P. Leech, L. McCarthy, P. Osvath","doi":"10.1109/ICONN.2008.4639280","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639280","url":null,"abstract":"We describe the patterning of multilayered foil by irradiation with excimer laser. The foil consisted of an upper layer of lacquer/ intermediate layers of polymer and Al/ a base layer of low melting point resin. Ablation of the foil was characterised by a sequential removal of the layers in the structure. A critical level of fluence and number of pulses was required to ablate each of the additional layers. Four threshold levels of damage have been identified as i) damage to the upper lacquer layer without removal, ii) the removal of the lacquer layer, iii) the removal of the intermediate layers and iv) the removal of all layers. Measurements of the ablation depth for a single pulse have shown a logarithmic dependence on laser fluence within the upper and intermediate layers.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"53 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132900949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639255
Yun Zhang, S. Soltanian, Yue Zhao, Sihai Zhou, S. Dou
In this paper, MgB2 bulks were prepared with doped TiO2 nanoparticles surface-modified by 5-10% SiO2. Quantitative X-ray diffraction (XRD) analysis was performed to obtain the weight fraction of impurities using the Rietveld method. The effects of addition of TiO2/SiO2 nanoparticles on the critical temperature (Tc), the upper critical field (Hc2), and the irreversibility field (Hirr) as a function of doping rates at 750degC are reported. It has been found that the addition of TiO2/SiO2 nanoparticles resulted in small depressions in Tc, while the Hc2 and Hirr performances were improved due to TiO2/SiO2 nanoparticle doping.
{"title":"Effect of addition of TiO2/SiO2 nanoparticles on Hc2 and Hirr in MgB2 bulks","authors":"Yun Zhang, S. Soltanian, Yue Zhao, Sihai Zhou, S. Dou","doi":"10.1109/ICONN.2008.4639255","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639255","url":null,"abstract":"In this paper, MgB<sub>2</sub> bulks were prepared with doped TiO<sub>2</sub> nanoparticles surface-modified by 5-10% SiO<sub>2</sub>. Quantitative X-ray diffraction (XRD) analysis was performed to obtain the weight fraction of impurities using the Rietveld method. The effects of addition of TiO<sub>2</sub>/SiO<sub>2</sub> nanoparticles on the critical temperature (T<sub>c</sub>), the upper critical field (H<sub>c2</sub>), and the irreversibility field (H<sub>irr</sub>) as a function of doping rates at 750degC are reported. It has been found that the addition of TiO<sub>2</sub>/SiO<sub>2</sub> nanoparticles resulted in small depressions in T<sub>c</sub>, while the Hc<sub>2</sub> and H<sub>irr</sub> performances were improved due to TiO<sub>2</sub>/SiO<sub>2</sub> nanoparticle doping.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132575395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639244
Å. Jamting, J. Miles
Nanotechnology is a global phenomenon that is already impacting significantly on Australia's scientific, technological, economic and social development. As the nanotechnology industry continues to grow in Australia, it will require a suitable scientific, commercial and regulatory environment. A fundamental element of this environment is measurement. Reliable measurements of physical, chemical and biological quantities are necessary at all stages of the nanotechnology value chain to both truly understand and control the manufacturing process and ensure and demonstrate product quality. This article outlines the current status of the nanometrology program at the National Measurement Institute, Australia (NMIA) and presents some recent work, including the results from our participation in three international comparisons.
{"title":"Metrology for nanotechnology","authors":"Å. Jamting, J. Miles","doi":"10.1109/ICONN.2008.4639244","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639244","url":null,"abstract":"Nanotechnology is a global phenomenon that is already impacting significantly on Australia's scientific, technological, economic and social development. As the nanotechnology industry continues to grow in Australia, it will require a suitable scientific, commercial and regulatory environment. A fundamental element of this environment is measurement. Reliable measurements of physical, chemical and biological quantities are necessary at all stages of the nanotechnology value chain to both truly understand and control the manufacturing process and ensure and demonstrate product quality. This article outlines the current status of the nanometrology program at the National Measurement Institute, Australia (NMIA) and presents some recent work, including the results from our participation in three international comparisons.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122057859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639257
Xianfeng Chen, T. Prow, M. Crichton, G. Fernando, M. Kendall
This study presents a simple, versatile and controllable method to achieve uniform coating on very small and densely packed micro-nanoprojections for epidermal immunotherapeutic delivery.
{"title":"Novel coating of micro-nanoprojection patches for targeted vaccine delivery to skin","authors":"Xianfeng Chen, T. Prow, M. Crichton, G. Fernando, M. Kendall","doi":"10.1109/ICONN.2008.4639257","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639257","url":null,"abstract":"This study presents a simple, versatile and controllable method to achieve uniform coating on very small and densely packed micro-nanoprojections for epidermal immunotherapeutic delivery.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128446268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639267
S. J. Angus, A. Ferguson, A. Dzurak, R. G. Clark
We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.
{"title":"A silicon radio-frequency single electron transistor at 4.2K","authors":"S. J. Angus, A. Ferguson, A. Dzurak, R. G. Clark","doi":"10.1109/ICONN.2008.4639267","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639267","url":null,"abstract":"We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132048651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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